GaAs Schottky Diodes Development for Millimeter Wave Doubler

We report the fabrication of GaAs Schottky diodes to be integrated in a 75/150 frequency doubler device. It is a collaborative work between IEMN and LERMA relied on the development of a process with optimizing several technological steps. As a result, very highquality GaAs Schottky diodes have been fabricated with a reverse breakdown voltage as high as 15.2 V at about 15 kA.cm-² current density and an ideality factor of 1.1. These results enabled to consider the design and simulation of a millimeter-wave frequency doubler with estimated efficiency and output power up to 30% and 120mW at 150 GHz, respectively.

Domaines

Sciences de l'ingénieur [physics] Micro et nanotechnologies/Microélectronique

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WOCSDICE2021_Hugo_Bouillaud_extended_abstract_v2.pdf (264.77 Ko)

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Hugo Bouillaud : Connectez-vous pour contacter le contributeur

https://hal.science/hal-03827748

Soumis le : lundi 24 octobre 2022-18:39:11

Dernière modification le : mercredi 30 octobre 2024-13:05:19

Archivage à long terme le : mercredi 25 janvier 2023-20:08:32

Dates et versions

hal-03827748 , version 1 (24-10-2022)

Identifiants

HAL Id : hal-03827748 , version 1

Citer

H. Bouillaud, Priyanka Mondal, Giuseppe Di Gioia, Mohammed Samnouni, Malek Zegaoui, et al.. GaAs Schottky Diodes Development for Millimeter Wave Doubler. Wocsdice 2021 - 44th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, Oct 2021, Bristol, United Kingdom. ⟨hal-03827748⟩

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OBSPM INSU ENS-PARIS CNRS UNIV-AMU UNIV-VALENCIENNES UNIV-CERGY IEMN LERMA CAMPUS-AAR AAI PSL UNIV-LILLE SORBONNE-UNIVERSITE SU-SCIENCES RENATECH MEMO-SHS

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